
IXFN82N60P
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXFN) Outline
g fs
C iss
C oss
C rss
V DS = 20V, I D = 41A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
50
80
23
1490
200
S
nF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 41A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 41A
28
23
79
24
240
96
67
ns
ns
ns
ns
nC
nC
nC
(M4 screws (4x) supplied)
R thJC
0.12 ° C/W
R thCS
Source-Drain Diode
0.05
° C/W
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
82
200
1.5
A
A
V
t rr
Q RM
I RM
Note
I F = 25A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
1.
0.6
6.0
200 ns
μ C
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537